中文摘要：

采用酞菁铁高温热解方法,以化学镀铜层为缓冲层在具有微方结构阵列的硅基底上制备了CNTs薄膜,基底微方阵列的单元尺度分别为10μm×10μm×20μm（微方底边长为10μm,高为20μm）和40μm×40μm×20μm（微方底边长为40μm,高为20μm）,微结构的阵列间距分别为30μm和80μm;在20GW脉冲功率源系统中采用二极管结构对两种CNTs薄膜进行强流脉冲发射特性测试。结果显示：随着脉冲电场峰值的增大,两种冷阴极的强流脉冲发射电流值逐渐增大,在相同峰值的脉冲电场下,微方结构单元尺度为10μm×10μm×20μm的基底上CNTs薄膜冷阴极的发射能力较大。结合利用有限元分析软件ANSYS模拟计算的微方阵列结构上表面的电场分布,研究了基底上两种微方阵列结构对碳纳米管薄膜强流脉冲发射能力的影响。

英文摘要：

Carbon nanotube （CNT） films were grown by the pyrolysis of iron phthalocyanine on the Si substrates with micro-cube array using electroless plated Cu layer as buffer. The unit scales of the micro-structure array are 10μm×10μm×20μm （i. e. the micro-cube bottom length is 10 μm, the height is 20 μm ） and 40μm×40μm×20μm （i. e. the micro-cube bottom length is 40 μm, the height is 20 μm ）, respectively. The array spacing of the micro cube is 30 μm and 80 μm, respectively. Intense pulsed field emission characteristics were measured on the two CNT films by 20 GW pulse power system using a diode structure. It is found that the peak emission current of the two cold cathodes increases gradually with the increase of the peak pulsed electric field. In the electric field with the same peak value, the CNTs films grown on the surface with 10μm×10μm×20μm micro-cube array has better emission ability. Combined with the theoretic study of electric field distribution on micro-cube array surface described by the finite element analysis software ANSYS, the influence of the two different micro-cube arrays on the intense pulsed emission of the CNTs is discussed.