中文摘要：

采用酞菁铁高温热解方法,以化学镀铜层为缓冲层,在具有微锥结构阵列的硅基底上制备了CNTs薄膜,并采用二极结构,在20 GW脉冲功率源系统中对其强流脉冲发射特性进行了测试。结果表明：在相同的峰值电场下,CNT薄膜的发射电流峰值随基底微结构单元尺寸的减小而增大,且当脉冲电场的峰值增加时,CNT薄膜的发射电流的峰值增长速度随基底微结构单元尺寸的减小而增大。结合利用有限元分析软件ANSYS模拟计算的微锥阵列结构上表面的电场分布,研究了不同单元尺寸的微锥阵列对碳纳米管薄膜强流脉冲发射能力的影响。

英文摘要：

Carbon nanotube（ CNT） thin films were grown on the surface of electroless plated Cu layer with micro-pyramid array structure silicon substrate by the pyrolysis of iron phthalocyanine. Intense pulsed field emission property of CNTs was measured on the 20 GW pulse power system using a diode structure.Experimental results show that,in the same peak electric field,the smaller the unit scale of micro structure,the bigger the intense pulsed emission current of CNTs thin films is,and when the peak value of the pulsed electric field increases,the peak increment rate of the emission current of the CNT thin film increases as the size of the substrate decreasing. Combined with the electric field distribution on the surface of the micro-pyramid array structure calculated by the finite element analysis software ANSYS,the influence of different unit scale micro-pyramid array on intense pulsed emission ability of CNT thin film was studied.