中文摘要：

随着金属氧化物半导体场效应管（melal-oxide semiconductor field effect transistors, MOSFETs 等比缩小迈向45nm技术节点，金属栅极已应用于新型MOSFET器件，改善了与高k栅介质的兼容性，并消除了传统多晶硅栅极的栅耗尽及硼穿透等效应．义章综述了pMOS器件金属栅极材料的发展历程、面临的主要问题以及未来的研究趋势等．

英文摘要：

As the scaling of metal oxide-semiconductor field effect transistors （MOSFETs） continues towards the 45nm technology node, metal gate electrodes have been used in novel MOSFET devices, improving compati bility with high k dielectrics and eliminating the effects of gate depletion and boron penetration. This paper reviews recent progress, issues that need to be solved, and future trends in the development of pMOS metal gate electrode materials.