中文摘要：

随着金属氧化物半导体场效应管（MOSFETs）等比缩小到45nm技术节点,具有高介电常数的栅介质材料（高k材料）取代传统的SiO2已经成为必然,然而Hf基高k材料在实际应用中仍然存在许多不足,而稀土元素掺杂在提高Hf基栅介质材料的k值、降低缺陷密度、调整MOSFETs器件的阈值电压等方面表现出明显的优势.本文综述了Hf基高k材料的发展历程,面临的挑战,稀土掺杂对Hf基高k材料性能的调节以及未来研究的趋势.

英文摘要：

As the scaling of MOSFETs continues towards 45 nm technology node,it is inevitable that Hf-based high-k materials replace the traditional SiO2 as the gate dielectrics of MOSFETs. But there are still many issues to be settled. Rare earth doping can increase the k value of dielectrics,decrease the defect densities of dielectrics and modulate the threshold voltage shift of MOSFETs. This paper reviews recent progress,the challenge of Hf-based high-k materials,the influence of rare earth doping on Hf-based high-k materials and its future trend.