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Effects of defect states on the performance of perovskite solar cells
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TM914.4[电气工程—电力电子与电力传动] O643.36[理学—物理化学;理学—化学]
  • 作者机构:State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Department of Materials Science andEngineering, Lanzhou University of Technology, Lanzhou 730050, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Nos. 11164014, 11364025), the Gansu Science and Technology Pillar Program (No. 1204GKCA057), and the Gansu Supercomputer Center.
中文摘要:

We built an ideal perovskite solar cell model and investigated the effects of defect states on the solar cell’s performance.The verities of defect states with a different energy level in the band gap and those in the absorption layer CH3NH3PbI3(MAPbI3),the interface between the buffer layer/MAPbI3,and the interface between the hole transport material(HTM) and MAPW3,were studied.We have quantitatively analyzed these effects on perovskite solar cells’ performance parameters.They are open-circuit voltage,short-circuit current,fill factor,and photoelectric conversion efficiency.We found that the performances of perovskite solar cells change worse with defect state density increasing,but when defect state density is lower than 1016 cm-3,the effects are small.Defect states in the absorption layer have much larger effects than those in the adjacent interface layers.The perovskite solar cells have better performance as its working temperature is reduced.When the thickness of MAPbI3is about 0.3 μm,perovskite solar cells show better comprehensive performance,while the thickness 0.05 μm for Spiro-OMeTAD is enough.

英文摘要:

We built an ideal perovskite solar cell model and investigated the effects of defect states on the so- lar cell's performance. The verities of defect states with a different energy level in the band gap and those in the absorption layer CH3NH3PbI3 (MAPbI3), the interface between the buffer layer/MAPbI3, and the interface be- tween the hole transport material (HTM) and MAPbI3, were studied. We have quantitatively analyzed these effects on perovskite solar cells' performance parameters. They are open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency. We found that the performances of perovskite solar cells change worse with defect state density increasing, but when defect state density is lower than 1016 cm^-3, the effects are small. Defect states in the absorption layer have much larger effects than those in the adjacent interface layers. The per-ovskite solar cells have better performance as its working temperature is reduced. When the thickness of MAPbI3 is about 0.3μm, perovskite solar cells show better comprehensive performance, while the thickness 0.05μm for Spiro-OMeTAD is enough.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754