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Numerical study on heterodyne terahertz detection in field effect transistor
ISSN号:1094-4087
期刊名称:OPTICS EXPRESS
时间:0
页码:7782-7789
相关项目:适应纳米尺度CMOS集成电路DFM的ULTRA模型完善和偏差模拟技术研究
作者:
Yan, Zhifeng|Zhu, Jingxuan|Wang, Yinglei|Lin, Xinnan|He, Jin|Cao, Juncheng|
同期刊论文项目
适应纳米尺度CMOS集成电路DFM的ULTRA模型完善和偏差模拟技术研究
期刊论文 20
会议论文 21
专利 3
同项目期刊论文
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A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystallin
Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs
Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests
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