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Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs
  • 期刊名称：J. Comput. Theor. Nanosci.
  • 时间：0
  • 页码：2684-2691
  • 相关项目：适应纳米尺度CMOS集成电路DFM的ULTRA模型完善和偏差模拟技术研究
作者： Jin He|Zhize Zhou|Cao Yu|Lin He|Yun Ye|Mansun Chan|
同期刊论文项目
适应纳米尺度CMOS集成电路DFM的ULTRA模型完善和偏差模拟技术研究
期刊论文 20 会议论文 21 专利 3
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