位置：成果数据库 > 期刊 > 期刊详情页
One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：O[理学]
  • 作者机构：[1]Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China, [2]The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering Peking University Shenzhen Graduate School, Shenzhen 518055, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 60876027 and 60976066）, and the National Science Fund for Distinguished Young Scholars of China （Grant No. 60925015）.
作者： 张健[1], 何进[1,2], 张立宁[1]
中文摘要：

Corresponding author. E-mail： frankhe@pku.edu.cn

同期刊论文项目
适应纳米尺度CMOS集成电路DFM的ULTRA模型完善和偏差模拟技术研究
期刊论文 20 会议论文 21 专利 3
硅基纳米尺度新结构器件
期刊论文 29 会议论文 15 获奖 4 专利 19
双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
期刊论文 26 会议论文 17
同项目期刊论文
A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
Study on Transport Characteristics of Silicon-Germanium Nanowire MOSFETs with Core-Shell Structure
A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulat
Analytical Solution of Subthreshold Channel Potential of Gate Underlap Cylindrical Gate-All-Around M
An oxide/silicon core/shell nanowire MOSFET
One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system
A Predictive Modeling for NBTI of Silicon Nanowire Device
Generic compact model of double-gate MOSFETs applicable to different operation modes and channels
A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFE
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks
A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric doubl
Charge-based model enhancement for undoped surrounding-gate MOSFETs
A carrier-based analytic drain current model incorporating velocity saturation for undoped surroundi
A charge-based compact model for predicting the current-voltage and capacitance-voltage characterist
Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with conti
A Physics Based Yet Computation Efficient Core Model for Undoped Surrounding-Gate MOSFET Current&nda
A continuous, analytic channel potential solution to doped symmetric double-gate MOSFETs from the ac
An improvement to the computational efficiency of the drain current model for double-gate MOSFET
Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs t
Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region
Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment f
Impact of the displacement damage in channel and source/drain regions on the DC characteristics degr
Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann
Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation
Graphene-Based Inductors: Fabrication and Performance
Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Tec
Novel single-loop multi-bit sigma-delta modulator using OTA sharing technique without DEM
LDMOS–SCR: a replacement for LDMOS with high ESD self-protection ability for HV application
A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negati
A SPICE model for a phase-change memory cell based on the analytical conductivity model
Multiregion DCIV: A Sensitive Tool for Characterizing the Si/SiO2 Interfaces in LDMOSFETs
Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping
Investigation of the OFF-State Behavior in Deep-Submicrometer NMOSFETs Under Heavy-Ion Irradiation b
An improvement to computational efficiency of the drain current model for double-gate MOSFET
Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implant
Comparison and improvement of two core compact models for double-gate MOSFETs
Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation techni
Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment
Gate-Modulated Photoresponse in Graphene Field-Effect Transistors
Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs
Vertical assembly of carbon nanotubes for via interconnects
A physical based model to predict performance degradation of FinFET accounting for interface state d
An improved single-loop sigma-delta modulator for GSM applications
改进的基于GSM标准二阶多位噪声耦合过采样调制器
Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor
Experimental clarification of orientation dependence of germanium PMOSFETs with Al2O3/GeOx/Ge gate stack
Simulation Study on a New Dual-Material Nanowire MOS Surrounding-Gate Transistor
An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
Numerical Simulation of Detection Response of Field Effect MOS Transistor to Modulated Terahertz Rad
A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Meta
Numerical study on heterodyne terahertz detection in field effect transistor
A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystallin
Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs
Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406