利用纳米压印和电刷镀技术在PET基体上制作出大面积金源、漏电极阵列。分别采用钛酸钡复合材料为介电层,印刷银电极为顶电极,聚芴-二噻吩基吡咯并吡咯二酮(PF8DPP)分离的半导体碳纳米管为有源层,在柔性基体上构建出全印刷碳纳米管薄膜晶体管器件和反相器。全印刷碳纳米管薄膜晶体管的开关比和迁移率分别达到4×10^4和6cm2·V^-1·s^-1,且器件表现出零回滞特性。构建的反相器在Vdd=8V时,其增益可以达到12。
Printed top-gate carbon nanotube thin-film transistors (TFTs) and inverters were achieved on flexible substrates. Large-scale gold electrode arrays were constructed on PET substrates using nano-imprinting in combination with the brush electroplating technique. PF8DPP-soretd sc-SWCNTs, BaTiO3 and printed silver electrodes were acted as the channel materials, the dielectric layer and the top gates, respectively. Printed topgate TFTs exhibited good performance with mobility up to 6 cm^2 · V ^-1·s^-1, on/off ratio of 104 and free hysteresis. Furthermore, the voltage gain of the inverter can reach 12 at Vda of 8V.