本文研究了聚[(2,7-9,9-二辛基芴基)-4,7-双(噻吩-2-基)苯并-2,1,3-噻二唑](PFODBT)分离的半导体碳纳米管薄膜晶体管的光电性能。在超声和高速离心辅助下,PFO-DBT能够从商业化单壁碳纳米管中选择性分离出高纯的半导体碳纳米管。用得到的半导体碳纳米管溶液通过气溶胶喷墨印刷方法构建出高性能印刷薄膜晶体管器件。印刷碳纳米管薄膜晶体管表现出高的开关比(107)和高迁移率(15.6 cm2·V-1·s-1)。并且所有制备的印刷薄膜晶体管具有很好的光敏感特性和很好的稳定性。
In this work,a simple and rapid method to selectively sort semiconducting-SWCNTs(sc-SWCNTs)with large diameters using poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole](PFO-DBT)is presented.The sorted sc-SWCNTs inks have been directly used to fabricate thin film transistors(TFTs)by aerosol jet printing.Printed TFTs with effective mobility ~15.6 cm~2·V~(-1)·s~(-13)and on/off ratio~10~7 have been achieved.In addition,all the printed devices exhibited rapid photocurrent response to light irradiation.TFTs based on PFO-DBT sorted sc-SWCNT exhibit good photoresponsive characteristics with good stability and rapid response.