中文摘要：

采用直流反应非平衡磁控溅射技术在单晶Si（100）和玻璃表面沉积氮化钽（Ta-N）薄膜。分别测试了薄膜的结构、成分、电阻率和吸收光谱，研究了氯氩流量比（N2：Ar）变化对Ta—N薄膜的结构和电学性能的影响。研究结果表明随N2：Ar增加，依次生成六方结构的γ-Ta2N、面心立方结构（fcc）的δ-TaNx体心四方结构（bct）的TaNx；N2：Ar在0．2～0．8的范围内，Ta—N薄膜中只存在着fcc δ-TaNx；当N2：Ar〉1之后，Ta—N薄膜中fCC δ-TaN，和bct TaNx共存。Ta—N薄膜电阻率随N2：Ar流量比增加持续增加，当N2：Ar为1．2时，薄膜变为绝缘体，光学禁带宽度为1．51eV。

英文摘要：

Tantalum nitride films （Ta-N） were fabricated on Si（100） and glass substrate by DC reactive unbalanced magnetron sputtering. The influence of nitrogen-to-argon flow ratios （N2 ： Ar） on the microstructure and electrics properties was studied. The results indicated that hexagonal structure γ-TazN, face-centered cubic （fcc） δ-TaNx and body-centered tetragonal （bct） TaNx was grown with increasing N2 ： Ar in turn. The metastable single-phase fcc δ-TaNx was formed while the N2 ： Ar ratio from 0.2 to 0.8. The δ-TaNx and bct TaNx were existing in Ta-N film at N2 ： Ar〉1. The resistivity of Ta-N films was increasing with increasing N2 ： Ar, and the film is the insulator with 1.51eV band-gap at N2 ： Ar ratio 1.2.