中文摘要：

GeSb2Te4 电影被 RF 磁控管在表面地形学上劈啪作响，和劈啪作响的力量的效果在 Si 底层上扔，反压缩性质与原子力量显微镜(AFM ) 和 nanoindenter 被学习。同时，有氧杂质的 GeSb2Te4 电影的机械性质也被调查。结果显示合适的劈啪作响功率为与高紧缩的结构和低表面粗糙获得 GeSb2Te4 电影是重要的，它介绍好负担支持电容。尽管 GeSb2Te4 电影的反压缩性质上的氧杂质的效果不总体上是很重要的，某些氧剂量能放松内部压力，从而，这些电影的坚硬稍微落下。

英文摘要：

GeSb2Te4 films were deposited on Si substrates by RF magnetron sputtering, and the effects of sputtering power on the surface topography and anti-compression properties were studied with atomic force microscope（AFM） and nanoindenter. Meanwhile, the mechanical properties of GeSb2Te4 films with oxygen impurity were also investigated. The results indicate that proper sputtering power is important for obtaining GeSb2Te4 films with high compact structure and low surface roughness, which present good load-support capacity. Although the effect of oxygen impurity on the anti-compression properties of GeSb2Te4 films is not very significant as a whole, certain oxygen dosage can relax the internal stress, thereby the hardness of the films drops slightly.