中文摘要：

基于0.18μm SiGe BiCMOS工艺,设计了应用于一款“10-Gbps跨阻放大器（TIA）”芯片的带隙基准电压源。该带隙基准电压源工作在3.0 V～3.6 V的电源电压下,输出基准参考电压为1.2 V,温度系数为10.0 ppm/℃,低频时电源抑制比为-69 d B,具有良好的性能。应用该带隙基准电压源完成了TIA芯片中偏置电路模块的设计,该偏置电路除了提供偏置电流外,还具备带宽调节功能,可实现对TIA输出电压信号带宽进行7.9 GHz、8.9 GHz、9.8 GHz和10.1 GHz四档调节,提高了TIA芯片的应用性。目前,带隙基准电压源与偏置电路随TIA芯片正在进行MPW（多项目晶圆）流片。

英文摘要：

Based on the SiGe BiCMOS 0.18 μm technology, a band-gap reference voltage source applied to a ＂10-Gbps trans- impedance amplifier （TIA）＂ chip has been designed. The band-gap reference vohage source works in 3.0 V-3.6 V supply voltage, the output reference voltage is 1.2 V, the temperature coefficient is 10.0 ppm/℃, the power supply rejection ratio is -69 dB at low frequency with good performance. And the design of bias circuit module of TIA chip has been completed by using the band-gap reference voltage source, the bias circuit in addition to provide bias current, also has a bandwidth adjustment function, and can realize on TIA output voltage signal bandwidth of 7.9 GHz, 8.9 GHz, 9.8 GHz and 10.1 GHz four gear adjustment, improve the application of TIA chip. At present, the TIA chip with band-gap reference voltage source and bias circuit under fabrication by MPW （Multi Proieet WaferS.