中文摘要：

采用0.13μm SiGe BiCMOS工艺,设计了一种低损耗高耦合的单圈倒装交错层叠结构的片上变压器,这种结构减小了初级线圈与次级线圈间的垂直距离,提高了线圈间的耦合度及线圈的品质因数Q,从而提高了变压器的传输效率。同时对地面层进行了改进,在100 GHz时,耦合因子k从0.81增大到0.95,并探讨了线圈直径d和宽度w对变压器性能的影响。该变压器在89 GHz时Q达到最大值18.5,在30-150 GHz频率范围内耦合因子k为0.65-1,最大可用增益Gmax接近于1,该变压器可应用于毫米波集成电路设计中改善电路性能。

英文摘要：

A low-loss and high-coupling single-turn flipped interlaced stacked on-chip transformer was designed in 0. 13 μm SiGe BiCMOS technology,this structure reduced the vertical distance between the primary coil and secondary coil,the coupling between the coils and quality-factor Q of the coils were improved,thus the transmission efficiency was raised. The ground floor was improved,the coupling-coefficient increased from 0. 81 to 0. 95 at 100 GHz,and the influences of the coil＇s diameter and width were discussed. The transformer＇s maximum Q of 18. 5at 89 GHz,the coupling-coefficient k of 0. 7 to 1 range from 30 GHz to 150 GHz,the maximum available gain Gmax was up to about 1,the transformer could be applied in the millimeter-wave（ mm-wave） IC design to improve the performance of the circuits.