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Effects of defect, carrier concentration and annealing process on the photoluminescence of silicon p
  • ISSN号：1369-8001
  • 期刊名称：Materials Science in Semiconductor Processing
  • 时间：0
  • 页码：173-178
  • 语言：英文
  • 相关项目：表面等离子共振增强硅基发光研究
作者： Fan, Ruixin|Li, Dongsheng|Gong, Daoren|Wang, Minghua|Yang, Deren|Yuan, Zhizhong|
同期刊论文项目
表面等离子共振增强硅基发光研究
期刊论文 14 会议论文 2 专利 2
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