中文摘要：

利用等离子增强化学气相沉积和离子注入方法,制备了铽掺杂的氮化硅薄膜,然后利用磁控溅射和热处理工艺在薄膜上沉积了不同颗粒尺寸的银薄膜来研究表面等离激元共振对铽离子荧光寿命的影响。实验结果表明氮化硅中Tb^3＋离子的光致荧光最强峰在547 nm,而银薄膜的存在会明显降低稀土离子Tb^3＋的荧光寿命,其寿命的改变是由于银薄膜的表面等离激元改变了电磁场的分布,从而影响了系统的局域光模密度（PMD）,理论计算的结果也验证了这一点。

英文摘要：

The motivation for developing silicon-based light emitters is the requirement of tiny light sources in the visible regions, which can be directly integrated into silicon chips for the analysis of different biological substances, for silicon optical couplers, and high-resolution low-cost micro displays. It is believed that the development of integrate circuit will open a door for the continuous increasing of silicon-based light emitters predicted by Moore＇s law. Many efforts, such as bulk silicon, Si nanocrystals, and rare earth （RE） coupled Si nanocrystals have been extensively studied. Weighing the studies mentioned above, rare RE-doped silicon light emitter, which has intense light emission even at room temperature, is a better candidate. In this report, the photoluminescence of Tb implanted SiNx films grown by plasma-enhanced chemical vapor deposition （PECVD） was investigated. And the effects of surface plasmon on the photoluminescence emission decay time of Tb^3＋ doped SiNx films with different sized of Ag islands films were investigated. The photoluminescence （PL） and time resolved photoluminescence（TRPL）at room temperature show that the PL of SiNx： Tb3. film has the highest intensity at 547 nm with corresponding emission decay time 708 ms. After sputtering silver films, the TRPL of Tb^3＋ ions shows the decrease of the emission decay time. An increase of emission decay time was observed due to the increased size of Ag islands after rapid thermal processing （RTP）. We find good agreement between our experimental results and those predicted by a classical theory., which assumes the emitter to be a damped oscillating electric dipole. Therefore, it allows one to be confident that the silver islands do altered the emission decay time which correspondingly improve the internal quantum efficiency of the SiNx ： Tb3