中文摘要：

常规方法测试超薄膜的厚度存在很大困难。介绍一种测试约4nm PtSi厚度的电阻率法。先制备厚度约40nm的薄膜,测试出薄膜电阻率,再考虑超薄膜的表面效应、尺寸效应,推导出超薄膜电阻率与薄膜电阻率的关系式,测试超薄膜方电阻,计算出超薄膜厚度。给出了TEM晶格像验证结果,误差小于6%。实验表明该方法简单易行,对其他超薄膜厚度的测试提供了参考。

英文摘要：

It is very difficult to test the thickness of ultra-thin films by conventional methods, so a method based on resistance test to determine the thickness of -4 nm PtSi ultra- thin film is introduced. Firstly, the film with the thickness of - 40 nm was prepared, and then its resistivity was tested. The relationship between the film resistivity and ultra-thin film resistivity was deduced based on analyzing surface effect and size effect of ultra-thin film. And the quartet resistivity and thickness were tested and calculated, respectively. Finally the results of TEM lattice image of the ultra-thin sample were given with an error rate of less than 6%. It shows that the method is convenient and can be used to determine the thickness of other ultrathin film.