中文摘要：

掺铊碘化铯（CsI（Tl））闪烁薄膜因其具有连续致密的微晶柱结构而被广泛应用。该文采用真空热蒸镀方法在单晶硅（Si）衬底和多晶铂硅（Pt/Si）衬底上制备不同厚度的CsI（Tl）薄膜,研究不同衬底上薄膜厚度增加过程中微晶柱结构中出现的裂纹形貌。不同厚度的CsI（Tl）薄膜制备工艺条件相同。通过X射线衍射图谱（XRD）和扫描电子显微照片（SEM）表征CsI（Tl）薄膜的结晶质量和微晶柱结构形貌,研究不同衬底上CsI（Tl）薄膜的微晶柱结构在生长过程中发生的变化。建立CsI（Tl）薄膜的微结构模型研究单晶薄膜中晶面间距对薄膜微晶柱结构的影响。

英文摘要：

Thallium doped cesium iodide （CsI（T1）） scintillator films are widely used for their dense micro-columnar structure. In this work, CsI（T1） films with different thickness were fabricated on monocrystalline silicon substrate and polycrystalline Pt/Si substrate by the thermal deposition method. These scintillator films with different thickness were manufactured under the same process conditions and prepared for experiments. The microcrystalline column structures were different during the thickness of films. X-ray diffraction （XRD） and scanning electron microscopy （SEM） were used to investigate the crystal quality and microcrystalline column morphology. The microstructure model of the CsI（T1） film was built to illustrate the influence of the interplanar spacing on microcrystalline column structures of the monocrystalline film.