采用中频磁控溅射制备了WSx薄膜,通过X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)和x射线光电子能谱(XPS)对其结构进行了分析,采用纳米压入仪(Triboindenter)和真空球一盘摩擦试验机分别考察了薄膜的力学性能和摩擦磨损性能.结果表明:改变溅射功率密度和气压,将引起选择性溅射与薄膜氧化程度的变化,致使薄膜S/W原子比随之变化,薄膜的S/W原子比随着溅射功率密度的增加先减小后增大,而随着溅射气压的增大逐渐增大.薄膜S/W原子比较低时,薄膜W含量较高,薄膜结构较致密、硬度较高,但摩擦系数较大、耐磨性能较差;随着S/W原子比的增大,薄膜中WSx含量显著增加,W含量明显下降,摩擦系数降低,耐磨性能明显改善.
WSx films on Si (100) wafer and 9Cr18 steel substrates were deposited by medium frequency magnetron sputtering. The structure of the films was characterized by X - ray diffraction, field emission scanning electron microscope, atomic force microscope and X -ray photoelectron spectroscope. The mechanical and tribological properties were investigated using triboindenter and vacuum ball - on - disk tribometer, respectively. The results show that the S/W ratio raised with increasing working pressure, and increased firstly and then decreased with increase in sputtering power density, that was ascribed to the different oxidation degree of the deposited films and the selective sputtering. When the S/W ratio