High-speed 2 × 2 silicon-based electro-optic switch with nanosecond switch time
- ISSN号:1674-1056
- 期刊名称:《中国物理B:英文版》
- 时间:0
- 分类:TN405[电子电信—微电子学与固体电子学] TM564[电气工程—电器]
- 作者机构:[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors Chinese Academy of Sciences, Beijing 100083, China
- 相关基金:Project supported by the National Natural Science Foundation of China (Grant No 60577044), the State Key Development Program for Basic Research of China (Grant No 2007CB613405) and the National High Technology Research and Development Program of China (Grant No 2006AA032424). Acknowledgements The authors are grateful to Yang Puhua, Ji An, Bai Yunxia, Han Weihua, Fan Zhongchao, Li Yan, Xu Jiadong, Wang Desong, Hu Chuanxian, and Pan Lingfeng in the Semiconductor Integration Technology Engineering Center, Zheng Jun in the State Key Laboratory on Integrated Optoeleetronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, Du Meng in the Institute of Mieroeleetronics, Chinese Academy of Sciences, Beijing, for their help in the device fabrication.
关键词:
电光开关, 绝缘硅, 纳秒, 开关时间, PIN二极管, 实验证明, 调制带宽, 光学结构, silicon-on-insulator, electro-optic switch, plasma dispersion effect, switch time
中文摘要:
E-mail: xjxu@semi.ac.cn