中文摘要：

针对a-Si∶H（n）/c-Si（p）双面异质结太阳电池结构,数值研究了不同p型单晶硅衬底厚度、氧缺陷密度、电阻率以及异质结界面缺陷态密度与电池转化效率之间的关系。结果表明：异质结界面缺陷态密度是影响电池性能的最主要因素,衬底前表面界面缺陷密度增大,主要降低开路电压和填充因子,衬底背表面界面缺陷态密度主要影响短路电流和填充因子。其次,p型硅衬底厚度减小和氧缺陷密度的增大,均导致短路电流密度下降,电池转化效率降低,特别是在界面缺陷态密度较低时,氧缺陷密度对电池性能影响较大;最后,在衬底前表面界面缺陷态密度为5×10^10cm^-2,后表面界面缺陷态密度为5×10^10cm^-2以及氧缺陷密度为10^9cm^-2时,衬底电阻率存在最优值1Ω.cm。

英文摘要：

Based on the structure of a-Si∶H/c-Si（p）heterojunction solar cell,the relationship of the cell efficiency with the thickness,the oxygen defect density,the resistivity and the defect density on the front and rear surface of the p-type c-Si wafer were investigated numerically by computer simulation.It is found that the defect density on the surface of the p-type c-Si wafer plays a crucial role to the performance of cells.And,the defect density on the front surface（Dit1）of the P-type wafer primarily affects the open-circuit voltage and the all factor（FF）,while the defect density on the rear surface（Dit2）of p-type c-Si wafer mostly affects the short-circuit current density and FF.The short-circuit current decreases both with the decrease of the thickness of p-type c-Si wafers and the increase of the oxygen defect density,which will deeply decrease the cell efficicncy.The optimized substrate resistivity is about 1 Ω·cm when Dit1=5×1010 cm-3,Dit2=5×1010 cm-3,and Dod=109 cm-2.