中文摘要：

采用酸腐多晶Si片的方法，获得了各向同性的表面织构。酸腐蚀液选取HF-HNO3混合溶液，并用H3PO4进行改良。分别利用扫描电镜（SEM）和光谱响应系统，分析了腐蚀后多晶Si片的表面形貌和反射率。结果表明，酸腐多晶Si表面分布均匀的蚯蚓状腐蚀坑，反射率很低，在等离子增强化学气相沉积（PECVD）Si3N4减反射膜后，反射率大大下降。

英文摘要：

Multicrystalline silicon（mc-Si） wafers were isotropically textured using add texturing methods. The acid etching solution was an aqueous solution of nitric acid（HNO3 ） and hydrofluoric acid（HF） for the investigation of the wet chemical approach,and it was modified with H3PO4. The mc-Si surface morphology and reflectance were analyzed by scanning electron microseope（SEM） and spectrum response system respectively. Results showed that the surface etched by the add solution was distributed with uniform earthworm-like etched-pits,and it had a very low reflectance. After PECVD Sia N4 the reflectance decreased remarkably.