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Thermal stability of silicon nanowires： atomistic simulation study
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN304.12[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]
  • 作者机构：Department of Physics, Xiangtan University, Xiangtan 411105, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No 10774127）.
作者： 刘文亮, 张凯旺, 钟建新
关键词： 硅纳米线, 热稳定性, 原子模拟, 熔化温度, 表面重建, 分子动力学, 结构演化, 仿真结果, molecular dynamics, silicon nanowires, thermal stability, melting points
中文摘要：

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406