中文摘要：

采用Ga2O3为Ga源,氨气为N源,通过高温化学气相沉积法制备了新颖的弯曲状Ga N纳米线,六方纤锌矿结构,直径约70~100 nm,长度最长可达几十微米,大部分纳米线呈链状,其生长机制呈VLS生长模式。拉曼光谱表明声子振动带有变宽的特征,基于浅施主态向浅受主态的跃迁包括缺陷层、表面态或残留杂质的影响,PL发光在436 nm和467 nm的出现宽峰。

英文摘要：

Novel curving GaN nanowires were frbricated by the CVD technique under high temperature by using Ga2O3 and NH3 as the Ga and N sources, respectively. The GaN nanowires with hexagonal wurtzite structure exhibited curving shape, and the width and length could reached 70 ~ 100 nm, and tens of micrometers. The growth of the GaN nanowires proceeded as the VLS model. Raman spectra showed that the phonon oscillation exhibited the broaden characterization and two wide peaks appeared at 436 and 467 nm, which was attributed to the transition of the shallow donor state to the acceptor one, including the defect layer, surface state or residual impurity.