位置：成果数据库 > 期刊 > 期刊详情页
Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-base
  • ISSN号：1094-4087
  • 期刊名称：Optics Express
  • 时间：2013.4.4
  • 页码：8444-8449
  • 相关项目：AlInN基新型异质结构制备和极化、输运性质研究
作者： Jia, Chuanyu|Yu, Tongjun|Lu, Huimin|Zhong, Cantao|Sun, Yongjian|Tong, Yuzhen|Zhang, Guoyi|
同期刊论文项目
AlInN基新型异质结构制备和极化、输运性质研究
期刊论文 33 专利 5
同项目期刊论文
Optical Characteristics of InGaN/GaN Light Emitting Diodes on Patterned Sapphire Substrate
Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy
Analyses of light extraction efficiency in GaN-based LEDs grown on patterned sapphire substrates
Degradation behaviors of high power GaN-based blue light emitting diodes
Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures
Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with align
Modulation of anisotropic crystalline in a-plane GaN on HT-AlN buffer layer
InGaN/GaN多量子阱蓝光发光二极管老化过程中的光谱特性
High conductive gate leakage current channels induced by In segregation around screw- and mixed-type
Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template
High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic va
GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG
Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Org
Efficiency droop behaviors of the blue LEDs on patterned sapphire substrate
GaN基微米LED大注入条件下发光特性研究
Fe-doped InN layers grown by molecular beam epitaxy
Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal-organic chemical vapo
Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered
Strain effects on InxAl1−xN crystalline quality grown on GaN templates by metalorganic chemica
The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy
GaN-based substrates and optoelectronic materials and devices
Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN templateQuasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template
氮化铝陶瓷湿法成型的研究进展