中文摘要：

采用脉冲磁控溅射法在高纯石英基底上制备了氧化铟锡（ITO）透明导电薄膜。通过X射线衍射仪、扫描电镜对石英基底上ITO薄膜的微观结构及表面形貌进行了分析,并且研究了溅射气压、溅射时间和衬底温度等工艺参数条件对以石英玻璃作基底制备的ITO薄膜的光电性能的影响。结果表明,在以石英为基底的氧化铟锡透明导电膜,在气压0.7Pa、溅射功率45 W条件下,基片温度为300℃,溅射时间为45min时,可见光透过率达83%,方块电阻达到5Ω左右。

英文摘要：

Transparent conductive indium tin oxide（ITO）films were prepared onto quartz substrate by pulsed magnetron sputtering.The microstructure and surface morphology of ITO thin films was investigated by X ray diffraction and scanning electron microscope,in order to gain the excellent electrical and optical property.The effect of sputtering time,substrate temperature and deposition pressure on the ITO films were studied.The results indicated that the visible light transmission rate of 83% sheet resistance reaches 5 Ωat quartz substrate in an indium tin oxide（ITO）transparent conductive film,pressure 0.7 Pa,sputtering power 45 W,substrate temperature 300 ℃ and sputtering time 45 min.