中文摘要：

采用脉冲激光沉积法（PLD）在Pt衬底（Pt/TiO2/SiO2/Si）上制备了SrTiO3（STO）薄膜,并对其表面特性,表面组成和结构进行了研究分析。在此基础上制备了具有三明治结构的Au/STO/Pt阻变器件,并测试了其I-V特性。结果显示：空间电荷限制电流（SCLC）机制对SrTiO3薄膜中氧空位的运输起了决定作用;薄膜界面缺陷对载流子的俘获与去俘获导致了SrTiO3薄膜I-V特性的产生。

英文摘要：

SrTiO3（STO） thin film was deposited on a Pt （Pt/TiO2/SiO2/Si） substrate by the pulsed laser deposition （PLD） method. The surface morphology, surface composition and crystal structure of the prepared film were studied. An Au/STO/Pt resistive switching device with a sandwich structure was then fabricated and the I-V characteristic of the device was investigated. The results show that the oxygen vacancy movement in the STO film is controlled by the space-charge-limited current （SCLS） mechanism, and the 1-V characteristic of the STO film is a result of electron trapping and releasing within the interface.