位置：成果数据库 > 期刊 > 期刊详情页
Stimulated emission at 288 nm from silicondoped AlGaN-based multiple-quantum-well laser
  • ISSN号：1094-4087
  • 期刊名称：Optics Express
  • 时间：2015.5.4
  • 页码：11334-11340
  • 相关项目：氮化镓基垂直结构发光二极管隧穿型电流匀化结构研究
作者： Guo, Enqing|Wei, Xuecheng|Wang, Junxi|Li, Jinmin|
同期刊论文项目
氮化镓基垂直结构发光二极管隧穿型电流匀化结构研究
期刊论文 7
同项目期刊论文
Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar
InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and hig
Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes
Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical lig
Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes