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InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and hig
ISSN号:1364-5021
期刊名称:Proceedings of the Royal Society A-Mathematical Ph
时间:2013.3.8
页码:47-51
相关项目:氮化镓基垂直结构发光二极管隧穿型电流匀化结构研究
作者:
Guo, Enqing|Yi, Xiaoyan|Zhu, Hongwei|Wang, Guohong|
同期刊论文项目
氮化镓基垂直结构发光二极管隧穿型电流匀化结构研究
期刊论文 7
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Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes