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Stress at the coalesced boundary of GaN grown on maskless periodically grooved sapphire
  • ISSN号：1842-6573
  • 期刊名称：Optoelectronics and Advanced Materials-Rapid Commu
  • 时间：2012
  • 页码：1034-1036
  • 相关项目：基于多模式原子力显微镜研究大功率氮化镓基发光二极管失效机制
作者： Yu Naisen|Mao Zhangwen|Hu Danyang|Zhao Ying|Yuan Qing|
同期刊论文项目
基于多模式原子力显微镜研究大功率氮化镓基发光二极管失效机制
期刊论文 19 会议论文 1 专利 1
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