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InGaN/GaN based light-emitting diodes grown on maskless periodically grooved sapphire fabricated by
  • ISSN号：1454-4164
  • 期刊名称：Journal of Optoelectronics and Advanced Materials
  • 时间：2011.10
  • 页码：1203-1207
  • 相关项目：基于多模式原子力显微镜研究大功率氮化镓基发光二极管失效机制
作者： Yu, Naisen|Zhu, Xueliang|Peng, Mingzeng|Xing, Zhigang|Zhou, Junming|
同期刊论文项目
基于多模式原子力显微镜研究大功率氮化镓基发光二极管失效机制
期刊论文 19 会议论文 1 专利 1
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