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InGaN/GaN light emitting diodes grown on Si(111) substrates by ammonia flow modulation method
  • 期刊名称：Optoelectronics and Advanced Materials-Rapid Commu
  • 时间：2013
  • 页码：14-17
  • 相关项目：基于多模式原子力显微镜研究大功率氮化镓基发光二极管失效机制
作者： Yu, Naisen|Du, Haiying|Zhang. Yongqiang|Hu, Boya|Cong, Yan|Wu, Yunfeng|
同期刊论文项目
基于多模式原子力显微镜研究大功率氮化镓基发光二极管失效机制
期刊论文 19 会议论文 1 专利 1
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