介绍了结构为:ITO/m-MTDATA(40nm)/NPB(5nm)/DPVBi(10~12nm)/Rubrene(0.5nm)/DPVBi(20~18nm)/Alq(50nm)/LiF(0.5nm)/Al的白光器件。该器件采用了两个DPVBi层中间夹一个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光、Alq的绿光和Rubrene的黄光,从而使器件发射性能较好的白光。当第一层的DPVBi和第二层的DPVBi的厚度分别是11nm和19nm时,其他层的厚度保持不变,该器件在15V电压下,最大亮度为11290cd/m^2,对应的效率为1.71cd/A,色坐标为(0.25,0.27),属于白光发射;在6V时,其最大效率为3.18cd/A。
White light devices with structures of ITO/m-MTDATA(40 nm)/NPB(5 nm)/ DPVBi(10-12 nm)/Rubrene(0.5 nm)/DPVBi(20~18 nm)/Alq(50 nm)/LiF(0.5 nm)/A1 have been introduced. The device uses two DPVBi layers to clamp a Rubrene thin layer. Such structure takes full advantage of the DPVBi hole block and luminous characters, so it keeps good balance of the blue light from DPVBi, the green light from Alq and the yellow light from Rubrene. Thus the device can emit white light of a better performance. When thicknesses of the first layer and the second layer DPVBi are 11 nm and 19 nm respectively, and thicknesses of other layers keep unchanged. The device's maximum brightness is 11 290 cd/m^2, corresponding to an efficiency of 1.71 cd/A at the voltage of 15 V and color coordinates for (0.25,0.27). And its maximum efficiency is 3.18 cd/A at the voltage of 6 V.