中文摘要：

【正】The space-charge layer(SCL)and surface depletion area(SDA)model for beveled p-n junction is presented.The surface space-charge density is calculated for depletion case of beveled p-n junction.Based on the finite difference method, the effect of the equivalent surface charge density on the surface depletion area for positively beveled p-n junction is also studied.Thyristors passivated with polyimide(PI)or polyester improved silicon paint(SP)are fabricated to verify the effect of equivalent surface charge on the peripheral surface of beveled p-n junction.The change of leakage current is sensitive to the surface charges.It indicates that the selection of passivation materials is a significant process to ensure the breakdown voltage capability of beveled devices.

英文摘要：

The space-charge layer （SCL） and surface depletion area （SDA） model for beveled p-n junction is presented. The surface space-charge density is calculated for depletion case of beveled p-n junction. Based on the finite difference method, the effect of the equivalent surface charge density on the surface depletion area for positively beveled p-n junction is also studied. Thyristors passivated with polyimide （PI） or polyester improved silicon paint （SP） are fabricated to verify the effect of equivalent surface charge on the peripheral surface of beveled p-n junction. The change of leakage current is sensitive to the surface charges. It indicates that the selection of passivation materials is a significant process to ensure the breakdown voltage capability of beveled devices.