中文摘要：

采用射频磁控溅射法成功制备了ZnO薄膜晶体管（ZnO-TFT），研究了ZnO—TFT电学性能的温度依赖性及其影响机理。从室温27℃到210℃的变化范围，随着器件温度的升高，ZnO-TFT的开关电流比和阈值电压都有明显的减小，亚阈值摆幅明显升高，有效场效应迁移率先增加再逐渐减小。电性能的变化主要来源于因温度升高引起的沟道有源层载流子浓度增加，点缺陷的形成，界面散射增强等多种因素复合作用所致。另外，当器件温度逐渐冷却至初始温度过程，器件的电特性与升温前存在一定的迟豫现象，这主要是由于升温期间ZnO薄膜有源层中产生的点缺陷（氧空位和间隙氧原子），以及被缺陷态陷阱的电子需要较长时间通过复合而消失。

英文摘要：

ZnO-based Thin Film Transistors （ZnO-TFTs） were fabricated by Radio Frequency （RF） magnetron sputtering successfully, and the temperature dependence and influence mechanism of the electrical characteristics of ZnO-TFTs are investigated. With the increase of the test temperature in the temperature range from 27 ℃ to 210 ℃, the on/off current ratio and the threshold voltage of the ZnO-TFT decrease significantly, and the subthreshold swing increases obviously, arid the carrier mobility increases firstly and then decreases gradually. The change of electrical properties is mainly due to the combination effect of the increase of carrier concentration, the generation of point defects, and the enhancement of interface scattering in the channel active layer caused by the temperature increase. In addition, when the device is instantaneously cooled to the initial temperature, there is a hysteresis in the electrical characteristics. The main reason is that the recombination process need take a long time to reach the initial state for the generated point defects and interstitial oxygen atoms in the active layer caused by high temperature on the heating stage.