中文摘要：

多晶的硅(poly-Si ) 薄电影被快速的热化学蒸汽免职(RTCVD ) 在石英底层上准备系统，和他们的结构被 XRD， SEM 和 TEM 分别地学习。XRD 系列展览一个单身者强壮(220 ) 衍射山峰，它显示 poly-Si 拍摄是优先地 <110> 面向。poly-Si 电影的表面与不同尺寸由大量多角形的金字塔谷物组成的飞机看法 SEM 图象表演，和剖面图 SEM 进一步想象显示他们是有对底层表面垂直的生长方向的圆柱的谷物。TEM 观察结果证明包括一个顺序有很多成双的晶体，二顺序、高顺序(? 3 ) 在 poly-Si 电影的成双的晶体。上述试验性的结果不能被常规意见在空气压力化学药品蒸汽免职(APCVD ) 准备的 poly-Si 电影的生长行为上阐明，但是能被模型在集中的立方的金属拍摄的脸发现了的 Inos 多样地孪生的粒子(MTP ) 解释。根据上述试验性的结果和 Inos 模型，我们趋于认为 poly-Si 电影的成核和谷物生长在石英底层上由 RTCVD 扔了基于 MTP，然后这些 MTP 形式的形成在一个岛生长模式的连续电影。

英文摘要：

Polycrystalline silicon （poly-Si） thin films were prepared on quartz substrates by rapid thermal chemical vapor deposition （RTCVD） system, and their structures were studied by XRD, SEM and TEM, respectively. XRD spectra exhibit a single strong （220） diffraction peak, which indicates that the poly-Si films are preferentially 〈110〉 oriented. Plane-view SEM images show that the surface of the poly-Si films is composed of large numbers of polygonal pyramid grains with different sizes, and cross-section SEM images further indicate that they are columnar grains with growth direction perpendicular to substrate surface. TEM obser- vation results demonstrate that there are a lot of twin crystals including one-order, two-order and high-order （≥3） twin crystals in the poly-Si films. The above experimental results can not be elucidated by the conventional opinion on growth behavior of poly-Si films prepared by atmosphere pressure chemical vapor deposition （APCVD）, but can be explained by the Ino＇s multiply twinned particles （MTPs） model found in the face centered cubic metal films. According to the above experimental results and Ino＇s model, we tend to think that nucleation and grain growth of poly-Si films deposited by RTCVD on quartz substrates are based on the formation of MTPs, and then these MTPs form the continuous films in an island growth mode.