用直流反应磁控溅射法制备了Pt-WO3气敏薄膜,进行了薄膜晶体结构和表面形貌的分析,研究了添加Pt对WO3电学和气敏特性的影响。实验证明:当Pt膜厚为4nm时,WO3薄膜对气体的敏感特性得到改善,对φ(NO2)=5×10^-6和φ(NH3)=10×10^-6的工作温度均降低了50℃,灵敏度分别达到11.5和900,是纯WO3薄膜的2~3倍,且响应时间缩短。
The Pt-WOs thin film gas sensors were prepared by DC reactive magnetron sputtering. The characteristic of film morphology and crystalline phase, the effects of Pt catalysis to the electrical and gas sensing properties of WO3 thin films were discussed. In case of 4 nm thickness of additive Pt, WO3 thin films had a promotional effect on the operating temperature decreased 50 ℃ to 5×10^-6 NO2 and 10×10^-6 NH3, on the sensitivity enhanced 2-3 times with respect to one of pure WO3 thin films and on the response time decreased.