中文摘要：

采用双槽电化学腐蚀法在P型单晶硅表面制备两种多孔硅．根据它们的孔径将它们分为介孔硅和大孔硅．使用扫描电子显微镜（SEM）观察两种多孔硅表面和断面形貌，介孔硅和大孔硅的表面化学键用傅里叶变换红外（FTIR）光谱仪来研究，通过I-V特性测试表征两种多孔硅电学特性，随后在室温下测试其气敏特性．结果表明：介孔硅具有较高的气体灵敏度，大孔硅具有较好的气体响应恢复特性．介孔硅对NO2气体具有较好的选择性，大孔硅对NH3气体具有较好的选择性．

英文摘要：

Two different kinds of porous silicon （PS） were grown by electrochemical corrosion in a double-tank cell on the surface of single-crystalline P-type silicon. According to their pore sizes, they were denoted as meso-porous silicon （meso-PS） and macro-porous silicon （macro-PS）. The surface and cross-section morphologies of the PS were observed by scanning electron microscope （SEM）. The surface chemical bonds of the meso-PS and macro-PS were investigated by Fourier transform infrared （FTIR） spectroscopy. The electrical properties of the PS were studied by measuring the I-V characteristics. The gas sensing properties of meso-PS and macro-PS were thoroughly measured at room temperature. Meso-PS has much higher sensitivity, while macro-PS has better response-recovery characteristics. Meso-PS shows better selectivity for NO2, while macro-PS shows better selectivity for NH3.