中文摘要：

本文提出和研究了利用超分辨缩小成像平板超透镜,在i线光源波长下实现纳米尺度光刻方法。为了在超分辨透镜像面位置获得高质量的光刻图形,采用超分辨透镜-光刻胶-反射银膜的结构方式,解决由于超透镜磁场偏振传输模式带来的成像光场畸变问题,大大提高了成像质量和光场对比度。采用掩模图形结构预补偿的方法,消除超分辨透镜的倍率畸变像差影响。基于有限元电磁计算方法,数值模拟结果验证了该方法在i线光源波长下实现纳米尺度缩小成像光刻的可能性。在i线（365nm）光源波长下,得到约35nm线宽的高对比成像光场模拟结果,并分析了结构参数变化对成像光场带来的影响。

英文摘要：

Nanolithography using hyperlens in planar form and i-line mercury lamp is presented. To obtain patterns with high quality at the imaging plane of hyperlens, lens-photoresist-silver layer structure is employed to avoid the blurring of electric field intensity distribution delivered by the transversal magnetic polarization features of hyperlens. Moreover,the specific design of mask is employed for compensating aberration of magnification non-uniformity of hyperlens. Numerical simulations demonstrate the ability of nanolithography by this method. About 35nm line width with high contrast is obtained in the light distribution and the geometrical parameters influence is also discussed.