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Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate M
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2013.11.11
  • 页码：3655-3662
  • 相关项目：高k介质MOS器件共振隧穿低频噪声模型及应用研究
作者： Li, Cong|Zhuang, Yiqi|Di, Shaoyan|Han, Ru|
同期刊论文项目
高k介质MOS器件共振隧穿低频噪声模型及应用研究
期刊论文 17
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