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Analytical threshold voltage model for cylindrical surrounding-gate MOSFET with electrically induced
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：2011.12.12
  • 页码：2053-2058
  • 相关项目：高k介质MOS器件共振隧穿低频噪声模型及应用研究
作者： Li, Cong|Zhuang, Yiqi|Han, Ru|Jin, Gang|Bao, Junlin|
同期刊论文项目
高k介质MOS器件共振隧穿低频噪声模型及应用研究
期刊论文 17
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