设计了(CdZnTe,ZnSeTe)/ZnTe复合量子阱结构,并用吸收光谱、室温光致发光谱和飞秒脉冲抽运-探测方法研究了该复合结构中的激子隧穿过程.分别测量了该结构中CdZnTe/ZnTe量子阱层和ZnSeTe/ZnTe量子阱层中激子衰减时间.观察到从CdZnTe/ZnTe量子阱层向ZnSeTe/ZnTe量子阱层的快速激子隧穿,隧穿时间为5.5 ps.
A new type of (CdZnTe, ZnSeTe)/ZnTe complex quantum wells was designed. Exciton tunneling process was investigated in this complex structure using absorption spectra, photoluminescence (PL) spectra and pump-probe measurements. The exciton decay time was measured in CdZnTe/ZnTe quantum well layers and ZnSeTe/ZnTe quantum well layers, respectively. And a fast exciton tunneling from CdZnTe/ZnTe quantum well to ZnSeTe/ZnTe quantum well was observed by transient differential transmission. The tunneling time is 5.5 ps.