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中文摘要：
采用MOCVD方法制备了ZnCdSe量子阱/CdSe量子点耦合结构,利用低温（5K）光致发光光谱和变密度发光光谱研究了该结构中的激子隧穿和复合.观察到在该结构中存在由量子阱到量子点的激子隧穿现象.改变垒层厚度会对量子阱和量子点的发光产生显著影响.在垒层较薄的阱/点耦合结构中,隧穿效应可以有效地抑制量子阱中的带填充和饱和效应.
英文摘要：
Coupling structures for a ZnCdSe quantum well and CdSe quantum dots （QDs） with different thickness of barrier layer were fabricated by metal organic chemical vapor deposition （MOCVD）. The recombination and tunneling of excitons in the ZnCdSe QW/CdSe QDs structure were investigated using photoluminescence （PL） spectra at 5K. The tunneling process of the exciton from QW to QDs was observed. The excitation light power dependence of PL peak position and PL-integrated intensity were also investiga- ted, respectively. The results reveaI that in this structure with thinner barrier layer, the absorption saturation in ZnCdSe quantum well can be restrained.
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