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Spectroscopic ellipsometry investigations of porous SiO2 films prepared by glancing angle deposition
  • ISSN号：0142-2421
  • 期刊名称：Surface and Interface Analysis
  • 时间：2013.11
  • 页码：1690-1694
  • 相关项目：过渡族元素掺杂二氧化铈稀磁半导体的铁磁性起源及相关性能研究
作者： 阳生红|张曰理|
关于阳生红：

过渡族元素掺杂二氧化铈稀磁半导体的铁磁性起源及相关性能研究
期刊论文 42
关于张曰理：

高取向钨青铜结构铁电、电光薄膜材料研究
期刊论文 18 会议论文 5
Bi1-XRXFeYCo1-YO3磁电信息功能材料制备、性能及调制研究
期刊论文 47
同期刊论文项目
过渡族元素掺杂二氧化铈稀磁半导体的铁磁性起源及相关性能研究
期刊论文 42
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