中文摘要：

测量了高功率976nm InGaAs量子阱半导体激光器在低于1/30阈值电流下的低频电噪声,提出了以1/f噪声时域信号小波系数相关性与电流的关系来分析噪声来源的方法.结合1/f噪声源理论模型及小波变换系数的特性,完成了不同偏置电流下纯1/f噪声、加白噪声后的1/f噪声两种情况下的对比实验.实验结果表明：所测的低频噪声表现为明显的1/f噪声,对于纯1/f噪声,噪声幅度和小波系数相关性在判断噪声来源时具有相同的结果;对于加白噪声后的1/f噪声,噪声幅度变化很大且不能正确表征1/f噪声来源,而部分尺度下的小波系数相关性仍能作为判断噪声来源的可靠参量.

英文摘要：

The electrical low-frequency noise of 976 nm InGaAs quantum well high-power semiconductor lasers was measured under a current less than 1/30 of the threshold current.An approach was proposed to analyze the noise origins by using the relation between the 1/fnoise correlation of time-domain signal wavelet coefficients and the bias current.Combining the 1/fnoise origin model with the characteristics of the wavelet coefficients,a series of contrast experiments were conducted to compare the results before and after adding white noise under different bias currents.The results indicate that,the low-frequency noise we measured shows typical 1/fnoise characteristics.For a pure 1/fnoise,the same results are obtained when to determine the noise origin by using the noise amplitude method and wavelet coefficients correlation method.However,for the 1/f noise signal containing white noise,there is a significant fluctuation on the noise amplitude and it cannot show the origin 1/fnoise correctly,whereas the wavelet coefficients correlation under some scales is still a reliable criterion.