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Morphology evolution of MOCVD grown GaN epitaxial layers on nanoPSS
  • ISSN号：1610-1634
  • 期刊名称：Physica Status Solidi C: Conferences
  • 时间：0
  • 页码：-
  • 相关项目：10微米以上GaN基厚膜垂直结构LED器件的制备及相关关键物理问题的研究
作者： Xianzhe Jiang|
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10微米以上GaN基厚膜垂直结构LED器件的制备及相关关键物理问题的研究
期刊论文 9 会议论文 9 专利 3
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