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Improvement of electrostatic discharge characteristics of InGaN/GaN MQWs light-emitting diodes by in
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：2012.3.3
  • 页码：-
  • 相关项目：10微米以上GaN基厚膜垂直结构LED器件的制备及相关关键物理问题的研究
作者： Chuanyu Jia|
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10微米以上GaN基厚膜垂直结构LED器件的制备及相关关键物理问题的研究
期刊论文 9 会议论文 9 专利 3
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