用溶胶-凝胶法和直流反应磁控溅射法制备了表面均匀致密的三氧化钨薄膜,并用双光束紫外可见分光光度计和X衍射分别对薄膜的透光性、结构形态进行了测定;描述了退火温度对薄膜透光性和结构形态的影响,结果表明在高温(〉300℃)退火处理后薄膜的透光率下降,且退火温度越高透光率越低;在350℃以下退火处理后得到薄膜样品为非晶态,在350~400℃范围内退火处理,样品由非晶态向晶态转变。
Tungsten oxide films are prepared with sol-gel and DC-reactive magnetron sputtering methods. The light transmittance of the samples is nvestigated by double-beam UV-VIS spectrophotometer. Amorphous state or crystalline sate of tungsten oxide films annealed at different temperature is analyzed by XRD. Results show that light transmittance decreases with annealing temperature increasing when annealing temperature is above 300℃ , and amorphous state changes to crystalline state at annealing range from 350℃ to 400℃.