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中文摘要：
采用射频磁控溅射工艺在玻璃衬底上制备出c轴择优取向的ZnO：Al（AZO）透明导电薄膜，靶材为AZO（2％质量分数Al2O3）陶瓷靶。对在不同溅射功率下沉积出来的薄膜运用X射线衍射（XRD）、可见光区透射谱、四探针方法分别进行结构和光电特性的表征。得出在200W下沉积的膜性能最好，可见光区平均透过率达到89％以上，电阻率最低为9．3×10^-4Ω·cm。
英文摘要：
Al-doped ZnO thin films were deposited on the glass substrate by RF magnetron sputtering with ZnO target mixed with Al2O3 （2wt%）. The effects of RF power on the structural, electrical and optical properties of AZO film were investigated. X-ray diffraction spectrum showed that the AZO film with the hexagonal crystal structure was polycrystalline and had a strongly preferred orientation of c axis. The visible transmittance of above 89 % and the minimum specific resistance of 9.3 × 10^-4 Ω· cm were obtained.
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