Si1Sb2Te3 phase change material for chalcogenide random access memory
- ISSN号：1674-1056
- 期刊名称：《中国物理B：英文版》
- 时间：0
- 分类：TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
- 作者机构：[1]Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China, [2]Graduate School of the Chinese Academic of Sciences, Beijing 100049, China, [3]Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086 U.S.A.
- 相关基金：Project supported by the Special Funds for Major State Basic Research Project of China （Grant No 2006CB302700）, the National High Technology Development Program of China （Grant No 2006AA03Z360）, the Chinese Academy of Sciences （Grant No Y2005027）, Science and Technology Council of Shanghai （Grant Nos 05JC14076, 0552nm043, AM0517, 06QA14060, 06XD14025, 0652nm003, and 06DZ22017）.
中文摘要：
Corresponding author. E-mail： tzhang@mail.sim.ac.cn
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